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Hydrothermally Grow...
Hydrothermally Grown Single-Crystalline Zinc Oxide; Characterization and Modification
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- Svensson, Bengt Gunnar (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Børseth, Thomas Moe (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Johansen, Klaus Magnus (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Maqsood, Tariq (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Schifano, Ramon (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Grossner, Ulrike (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Christensen, Jens S. (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Vines, Lasse (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Klason, Peter (författare)
- Physics, University of Gothenburg, Gothenburg, Sweden
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- Zhao, Qing X. (författare)
- Physics, University of Gothenburg, Gothenburg, Sweden
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- Willander, Magnus, 1948- (författare)
- Linköpings universitet,Fysik och elektroteknik,Tekniska högskolan,Physics, University of Gothenburg, Gothenburg, Sweden
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- Tuomisto, Filip (författare)
- Physics, Helsinki University of Technology, Helsinki, Finland
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- Skoruppa, Wolfgang (författare)
- Research Center Rossendorf, Dresden, Germany
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- Monakhov, Edouard V (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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- Kuznetosov, Andrej Yu. (författare)
- Physics/SMN, University of Oslo, Oslo, Norway
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(creator_code:org_t)
- Warrendale, PA, USA : Materials Research Society, 2007
- 2007
- Engelska.
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Ingår i: MRS Proceedings Volume 1035 / 2007. - Warrendale, PA, USA : Materials Research Society.
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- An overview of our recent results on characterization and modification of high-resistivity n-type bulk zinc oxide samples, grown by hydrothermal techniques, is given. Three specific topics are addressed; (i) the role of lithium (Li) as an electrically compensating impurity, (ii) extrinsic n-type doping by hydrogen implantation, and (iii) influence of annealing conditions on deep band emission. In (i), furnace annealing of as-grown samples at temperatures above ∼800 °C is shown to cause out-diffusion of residual Li impurities and concurrently, the resistivity decreases. After annealing at 1400 °C, a resistivity close to 10−1 Ωcm is obtained and the Li content is reduced from above 1017 cm−3 to the mid 1015 cm−3 range, providing evidence for the crucial role of Li as an electrically compensating impurity. For ion-implanted samples, vacancy clusters evolve during post-implant flash lamp annealing (20 ms duration) and these clusters appear to trap and deactivate Li with a resulting improvement of the n-type conductivity. However, these clusters have a limited stability and start to dissociate already after 1h at 900 °C, accompanied by a decrease in the conductivity. For topic (ii), n-type doping by hydrogen implantation is shown to enhance the conductivity by about 5 orders of magnitude already in the as-implanted state. Despite substantial loss of hydrogen, the conductivity remains stable, or even increases, after annealing up to ≥600 °C, and necessary conditions for doping by hydrogen are discussed. In (iii), the origin of the commonly observed deep band emission from monocrystalline zinc oxide is investigated using a concept of annealing as-grown samples in different atmospheres. A strong influence by the atmosphere and temperature is observed and the results can be interpreted in terms of dominant effects on the emission by vacancy-related defects.
Nyckelord
- semiconducting; electrical properties; optical properties
- TECHNOLOGY
- TEKNIKVETENSKAP
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Svensson, Bengt ...
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Børseth, Thomas ...
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Johansen, Klaus ...
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Maqsood, Tariq
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Schifano, Ramon
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Grossner, Ulrike
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Christensen, Jen ...
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Vines, Lasse
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Klason, Peter
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Zhao, Qing X.
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Willander, Magnu ...
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Tuomisto, Filip
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Skoruppa, Wolfga ...
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Monakhov, Edouar ...
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Kuznetosov, Andr ...
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Linköpings universitet