Search: (WFRF:(Janzén Erik 1954 )) pers:(Ohshima T.)
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Defects introduced ...
Defects introduced by electron-irradiation at low temperatures in SiC
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- Nguyen, Son Tien, 1953- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Isoya, J. (author)
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Morishita, N. (author)
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Ohshima, T. (author)
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Itoh, H. (author)
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- Gali, Adam, 2000- (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Janzén, Erik, 1954- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Trans Tech Publicarions, 2009
- 2009
- English.
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In: Materials Science Forum Vols. 615-617. - : Trans Tech Publicarions. - 9780878493340 ; , s. 377-380
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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