Defects introduced by electron-irradiation at low temperatures in SiC

Nguyen, Son Tien,1953-Linköpings universitet,Tekniska högskolan,Halvledarmaterial (author)

Defects introduced by electron irradiation at ~80-100 K in 3C-, 4H- and 6H-SiC were studied by electron paramagnetic resonance (EPR). A number of EPR spectra, labelled LE1-10, were detected. Combining EPR and supercell calculations, we will show that the LE1 center in 3C-SiC with C2v symmetry and an electron spin S=3/2 is related to the (VSi-Sii)3+ Frenkel pair between the silicon vacancy and a second neighbour Sii interstitial along the <100> direction. Results on other centers, possibly also related to interstitials, are discussed.

Isoya, J. (author)
Morishita, N. (author)
Ohshima, T. (author)
Itoh, H. (author)
Gali, Adam,2000-Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)adaga79 (author)
Janzén, Erik,1954-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)erija14 (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

In:Materials Science Forum Vols. 615-617: Trans Tech Publicarions, s. 377-3809780878493340

By the author/editor: Nguyen, Son Tien ...; Isoya, J.; Morishita, N.; Ohshima, T.; Itoh, H.; Gali, Adam, 2000 ...; show more...; Janzén, Erik, 19 ...; show less...

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