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Formation of grown-...
Formation of grown-in defects in molecular beam epitaxial Ga(In)NP : effects of growth conditions and post-growth treatments
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- Dagnelund, Daniel, 1980- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Wang, Xingjun, 1972- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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Utsumi, A. (författare)
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Furukawa, Y. (författare)
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Wakahara, A. (författare)
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Yonezu, H. (författare)
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(creator_code:org_t)
- AIP Publishing, 2008
- 2008
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 103, s. 063519-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Effects of growth conditions and post-growth treatments, such as presence of N ions, N2 flow, growth temperature, In alloying, and postgrowth rapid thermal annealing (RTA), on formation of grown-in defects in Ga(In)NP prepared by molecular beam epitaxy are studied in detail by the optically detected magnetic resonance (ODMR) technique. Several common residual defects, such as two Ga-interstitial defects (i.e., Gai-A and Gai-B) and two unidentified defects with a g factor around 2 (denoted by S1 and S2), are closely monitored. Bombardment of impinging N ions on grown sample surface is found to facilitate formation of these defects. Higher N2 flow is shown to have an even more profound effect than a higher number of ions in introducing these defects. Incorporation of a small amount of In (e.g., 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In; however, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Gai-related defects formed during the growth. In the alloys where the Gai-A and Gai-B defects are absent in the as-grown samples (i.e., GaNP grown at a low temperature of 460 °C), the concentrations of the two Gai defects are found to increase after postgrowth RTA. This indicates that the defects originally introduced in the as-grown alloys have been transformed into the more thermally stable Gai-A and Gai-B during RTA. On the other hand, when the Gai-A and Gai-B are readily abundant (e.g., at higher growth temperatures (>=500 °C), RTA leads to a slight reduction of the Gai-A and Gai-B ODMR signals. The S2 defect is also shown to be thermally stable upon the RTA treatment.
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Dagnelund, Danie ...
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Buyanova, Irina, ...
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Wang, Xingjun, 1 ...
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Chen, Weimin, 19 ...
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Utsumi, A.
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Furukawa, Y.
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Wakahara, A.
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Yonezu, H.
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Linköpings universitet