Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes

• Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called -spin-LEDs-). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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NATURAL SCIENCES

NATURVETENSKAP

Semiconductor physics

Halvledarfysik

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