Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes

Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called -spin-LEDs-). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer.

Smirnov, N. B. (author)
Govorkov, A. V. (author)
Kim, J. (author)
Ren, F. (author)
Thaler, G. T. (author)
Frazier, R. M. (author)
Gila, B. P. (author)
Abernathy, C. R. (author)
Pearton, S. J. (author)
Buyanova, Irina,1960-Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material(Swepub:liu)iribo40 (author)
Rudko, G. Y. (author)
Chen, Weimin,1959-Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material(Swepub:liu)weich55 (author)
Pan, C.-C. (author)
Chen, G.-T. (author)
Chyi, J.-I. (author)
Zavada, J. M. (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

In:Journal of Electronic Materials: Springer Science and Business Media LLC33:3, s. 241-2470361-52351543-186X

By the author/editor: Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kim, J.; Ren, F.; Thaler, G. T.; show more...; Frazier, R. M.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.; Buyanova, Irina, ...; Rudko, G. Y.; Chen, Weimin, 19 ...; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.; Zavada, J. M.; show less...

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NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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