Sökning: L773:0003 6951 OR L773:1077 3118
> (1995-1999) >
Effect of growth te...
Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
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- Buyanova, Irina, 1960- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Chen, Weimin, 1959- (författare)
- Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material
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- Monemar, Bo, 1942- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Xin, H. P. (författare)
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Tu, C. W. (författare)
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(creator_code:org_t)
- AIP Publishing, 1999
- 1999
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 75:24, s. 3781-
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- The effect of growth temperature on the optical properties of GaAs/GaNxAs1-x quantum wells is studied in detail using photoluminescence (PL) spectroscopies. An increase in growth temperature up to 580 °C is shown to improve the optical quality of the structures, while still allowing one to achieve high (>3%) N incorporation. This conclusion is based on: (i) an observed increase in intensity of the GaNAs-related near-band-edge emission; (ii) a reduction in band-edge potential fluctuations, deduced from the analysis of the PL line shape; and (iii) a decrease in concentration of some extended defects detected under resonant excitation of the GaNAs. The thermal quenching of the GaNAs-related PL emission, however, is almost independent of the growth temperature and is attributed to a thermal activation of an efficient nonradiative recombination channel located in the GaNAs layers.
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