Sökning: (WFRF:(Janzén Erik 1954 )) pers:(Ohshima T.)
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Photo-EPR Studies o...
Photo-EPR Studies on Low-Energy Electron-irradiated 4H-SiC
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- Carlsson, Patrick, 1975- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Nguyen, Son Tien, 1953- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Pedersen, Henrik, 1981- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Isoya, J. (författare)
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Morishita, N. (författare)
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Ohshima, T. (författare)
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Itoh, H. (författare)
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- Janzén, Erik, 1954- (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Materials Science Forum Vols. 615-617 : Trans Tech Publications, 2009
- 2009
- Engelska.
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Ingår i: Materials Science Forum, Vols. 615-617. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 9780878493340 ; , s. 401-404
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
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- Photoexcitation electron paramagnetic resonance (photo-EPR) was used to determine deep levels related to the carbon vacancy (VC) in 4H-SiC. High-purity free-standing n-type 4H-SiC epilayers with concentration of intrinsic defects (except the photo-insensitive SI1 center) below the detection limit of EPR were irradiated with low-energy (200 keV) electrons to create mainly VC and defects related to the C sublattice. The simultaneous observation of and signals, their relative intensity changes and the absence of other defects in the sample provide a more straight and reliable interpretation of the photo-EPR results. The study suggests that the (+|0) level of VC is located at ~EC–1.77 eV in agreement with previously reported results and its single and double acceptor levels may be at ~ EC–0.8 eV and ~ EC–1.0 eV, respectively.
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- NATURAL SCIENCES
- NATURVETENSKAP
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