On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications

ul-Hassan, Jawad,1974-Linköpings universitet,Tekniska högskolan,Halvledarmaterial (author)

Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface preparation before starting the growth. Si-face polished surfaces were studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2” wafer. Complete PiN structure was grown and more than 70% of the diodes showed a stable behavior and the forward voltage drift was less than 0.1 V. Also, a comparison of the electroluminescence images of diodes before and after heavy injection of 125 A/cm2 for 30 min did not show any sign of stacking fault formation in the device active region.

Bergman, Peder,1961-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)pedbe86 (author)
Henry, Anne,1959-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)annhe32 (author)
Brosselard, P. (author)
Godignon, P. (author)
Janzén, Erik,1954-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)erija14 (author)
Linköpings universitetTekniska högskolan (creator_code:org_t)

In:Materials Science Forum Vols. 615-617: Trans Tech Publications, s. 133-1369780878493340

By the author/editor: ul-Hassan, Jawad ...; Bergman, Peder, ...; Henry, Anne, 195 ...; Brosselard, P.; Godignon, P.; Janzén, Erik, 19 ...

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