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Radiation resistanc...
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Strokan, N.B.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
(författare)
Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
- Artikel/kapitelEngelska2004
Förlag, utgivningsår, omfång ...
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Pleiades Publishing Ltd,2004
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-45705
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-45705URI
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https://doi.org/10.1134/1.1777605DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".
Ämnesord och genrebeteckningar
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TECHNOLOGY
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TEKNIKVETENSKAP
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Ivanov, A.M.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
(författare)
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Savkina, N.S.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
(författare)
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Lebedev, A.A.Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation
(författare)
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Kozlovskii, V.V.Kozlovskii, V.V., St. Petersburg Polytech. University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russian Federation
(författare)
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Syväjärvi, MikaelLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)miksy08
(författare)
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Yakimova, RositsaLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)rosia15
(författare)
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Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian FederationKozlovskii, V.V., St. Petersburg Polytech. University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russian Federation
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Semiconductors (Woodbury, N.Y.): Pleiades Publishing Ltd38:7, s. 807-8111063-78261090-6479
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