Dislocations at the interface between sapphire and GaN

Lankinen, A.Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland (författare)

GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 10(5) cm(-2) defects were seen in the interface between GaN and sapphire by utilizing large-area back-reflection topography for the sapphire substrates. The misfit dislocation images in the topographs form a well-resolved cellular network, in which the average cell size is roughly 30 mu m. Different cell shapes in the misfit dislocation networks are observed on different samples. Also, images of small-angle grains of similar size were found in transmission section topographs of the GaN layers.

Lang, T.Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland (författare)
Suihkonen, S.Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland (författare)
Svensk, O.Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland (författare)
Saynatjoki, A.Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland (författare)
Tuomi, T. O.Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland (författare)
McNally, P. J.Dublin City Univ, Res Inst Networks & Commun Engn, Dublin 9, Ireland (författare)
Odnoblyudov, M.OptoGaN Oy, Espoo 02150, Finland (författare)
Bougrov, V.OptoGaN Oy, Espoo 02150, Finland (författare)
Danilewsky, A. N.Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany (författare)
Bergman, PederLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)pedbe86 (författare)
Simon, R.ANKA, Inst Synchrotron Radiat, Karlsruhe, Germany (författare)
Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, FinlandDublin City Univ, Res Inst Networks & Commun Engn, Dublin 9, Ireland (creator_code:org_t)

Ingår i:Journal of materials science. Materials in electronics: Springer Science and Business Media LLC19:2, s. 143-1480957-45221573-482X

Av författaren/redakt...: Lankinen, A.; Lang, T.; Suihkonen, S.; Svensk, O.; Saynatjoki, A.; Tuomi, T. O.; visa fler...; McNally, P. J.; Odnoblyudov, M.; Bougrov, V.; Danilewsky, A. N ...; Bergman, Peder; Simon, R.; visa färre...

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