The VO2* defect in silicon

• The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400°C. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these O atoms give rise to one infrared absorption band at 895.5 cm-1 at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second O atom is in a backbond position. Two vibrational bands, at 928.4 and 1003.8 cm-1 (positions at 15 K), are assigned to this configuration. © 2003 Elsevier B.V. All rights reserved.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Defects

LVMs

Silicon

Vacancy-dioxygen

NATURAL SCIENCES

NATURVETENSKAP

vacancy-dioxygen

silicon

defects

LVMs

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