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  • Osterman, J.Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden (author)

Scanning spreading resistance microscopy of aluminum implanted 4H-SiC

  • Article/chapterEnglish2003

Publisher, publication year, extent ...

  • 2003
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-46483
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-46483URI
  • https://doi.org/10.1016/S0921-5107(03)00018-7DOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22790URI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:vet swepub-contenttype
  • Subject category:kon swepub-publicationtype

Notes

  • QC 20100525
  • Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 °C. Finally, an apparent activation energy for the process of 3 eV is estimated. © 2003 Elsevier B.V. All rights reserved.

Subject headings and genre

  • Activation
  • Implantation
  • Silicon carbide
  • SSRM
  • TECHNOLOGY
  • TEKNIKVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Abtin, L.Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden (author)
  • Zimmermann, U.Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden (author)
  • Janson, M.S.Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden (author)
  • Anand, SrinivasanKTH,Mikroelektronik och informationsteknik, IMIT,Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden(Swepub:kth)u16fqvka (author)
  • Hallin, ChristerLinköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)chrha60 (author)
  • Hallén, AndersKTH,Mikroelektronik och informationsteknik, IMIT,Hallén, A., Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, Sweden(Swepub:kth)u11ywmz1 (author)
  • Department of Microelectronics, Royal Institute of Technology, PO Box Electrum 229, S 164 40 Kista, SwedenMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Related titles

  • In:Materials Science & Engineering102:1-3, s. 128-1310921-51071873-4944

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