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Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films
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- Lebedev, A.A. (författare)
- A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation
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- Strokan, N.B. (författare)
- A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation
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- Ivanov, A.M. (författare)
- A. F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation
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- A F. Ioffe Physico-Technical Institute, Polytekhnichaskaja 26, 194021, St. Petersburg, Russian Federation Institutionen för fysik, kemi och biologi (creator_code:org_t)
- AIP Publishing, 2001
- 2001
- Engelska.
- Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:26, s. 4447-4449
- Tidskriftsartikel (refereegranskat)
Abstract
Ämnesord
Stäng
- The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n-p-n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.
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- Lebedev, A.A.
- Strokan, N.B.
- Ivanov, A.M.
- Davydov, D.V.
- Savkina, N.S.
- Bogdanova, E.V.
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- Kuznetsov, A.N.
- Yakimova, R.
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