Oxide growth on SiC(0 0 0 1) surfaces

• The oxidation of 6H SiC(0 0 0 1) surfaces is studied by high resolution photoelectron spectroscopy. We compare the oxides formed by HF dip, by room temperature treatment in ozone, and by thermal oxidation in air at 1000 °C, respectively. We find a stable intermediate layer in all investigated systems which differs from the bulk oxide that is stable up to 1200 °C. Our data suggest that the growth of the SiO2 layer proceeds via that intermediate silicate layer. © 2001 Published by Elsevier Science B.V.

Nyckelord

Depth profiling

FET device

Ozone and thermal oxidation

SiC oxide interface

Silicate layer

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