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On the role of elec...
On the role of electron exchange and correlation in semiconductor quantum dots
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- Berggren, Karl-Fredrik (author)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
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Yakimenko, I.I. (author)
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- Bychkov, A.M. (author)
- Centre for Quantum Computation, Clarendon Laboratory, Oxford OX1 3PU, United Kingdom, Moscow State Engineering Physics Institute, Technical University, 115409 Moscow, Russian Federation
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(creator_code:org_t)
- 2001-11-28
- 2001
- English.
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 12:4, s. 529-532
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Spontaneous magnetization of single and coupled quantum dots formed by lateral confinement of a high-mobility two-dimensional electron gas is studied for a realistic GaAs/AlGaAs heterostructure. The modelling of the device takes into account contributions from a patterned gate, doping, surface states, and mirror charges. To explore the magnetic properties we use the Kohn-Sham local spin-density formalism including the contributions from electron correlation and exchange. We show by explicit calculations that the exchange is the dominant mechanism driving a spontaneous magnetization of a dot. The correlation potential reduces the amount of level splitting and usually affects the electron content in the dot at a given gate voltage. These effects are, however, small and may be neglected under present circumstances. Single dots with up to 50 electrons have been studied.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- vet (subject category)
- kon (subject category)
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