Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

• The influence of high temperature buffer layers on the structural characteristics of GaN grown by hydride vapour phase epitaxy on sapphire was investigated. Strain relaxation as well as mismatch-induced defect reduction in thick GaN layers grown on AlN buffer was microscopically identified using cathodoluminescence and micro-Raman spectroscopy in cross-section of the films. The results were correlated with photoluminescence and Hall-effect data of layers with different thicknesses. These relaxation processes were suggested to account for the specific defect distribution in the buffers revealed by high-resolution X-ray diffraction and transmission electron microscopy. © 2001 Elsevier Science B.V. All rights reserved.

Keyword

A1. Crystal structure

A1. Defects

A1. Optical microscopy

A1. Stresses

A3. Hydride vapor phase epitaxy

B1. Nitrides

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

art (subject category)