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Bound excitons in GaN
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Monemar, BoLinköpings universitet,Tekniska högskolan,Halvledarmaterial
(författare)
Bound excitons in GaN
- Artikel/kapitelEngelska2001
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2001-07-26
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IOP Publishing,2001
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LIBRIS-ID:oai:DiVA.org:liu-47291
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-47291URI
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https://doi.org/10.1088/0953-8984/13/32/309DOI
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Språk:engelska
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Sammanfattning på:engelska
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The electronic structure of bound excitons in GaN is discussed, with reference to available optical data. Emphasis is given to the neutral-donor and neutralacceptor spectra, which are the most prominent ones in the experimental photoluminescence data. Two dominant donor bound excitons are observed with photoluminescence lines just above 3.47 eV at 2 K in unstrained samples, tentatively associated with Si and O shallow donors. Several acceptor bound excitons are present, the most prominent one with a photoluminescence line at about 3.466 eV is tentatively assigned to the Mg acceptor. We attempt an explanation of the available data from magneto-optical experiments on this line in terms of a spin-like acceptor hole, as observed in independent magnetic resonance data. Characteristic deep emissions related to P and As doping are reported, they may be interpreted in terms of isoelectronic bound excitons. Excitons bound to structural defects in GaN are also briefly discussed.
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TECHNOLOGY
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TEKNIKVETENSKAP
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Linköpings universitetTekniska högskolan
(creator_code:org_t)
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Ingår i:Journal of Physics: IOP Publishing13:32, s. 7011-70260953-89841361-648X
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