MBE-based SiGe/Si heterojunction multilayer structures

• In this paper, SiGe/Si multilayer heterostructures prepared by molecular beam epitaxy (MBE) are described with the aim of manufacturing SiGe heterojunction bipolar transistors (HBTs). Based on the simulations made by Medici, device structures have been designed and grown. The quality of the MBE layered structures has been characterized by reflection high-energy electron diffraction, X-ray diffraction, secondary ion mass spectrometry and spreading resistance. Furthermore, SiGe-HBTs have been fabricated. Promising DC and RF results of processed HBT devices have been obtained. © 2001 Elsevier Science B.V.

Nyckelord

A1. Doping

A1. X-ray diffraction

A2. Single crystal growth

A3. Molecular beam epitaxy

B1. Germanium silicon alloys

B2. Semiconducting silicon

B3. Bipolar transistors

B3. Heterojunction semiconductor devices

TECHNOLOGY

TEKNIKVETENSKAP

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