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MBE-based SiGe/Si h...
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Li, K.National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China
(author)
MBE-based SiGe/Si heterojunction multilayer structures
- Article/chapterEnglish2001
Publisher, publication year, extent ...
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-47327
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-47327URI
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https://doi.org/10.1016/S0022-0248(01)00819-3DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:vet swepub-contenttype
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Subject category:kon swepub-publicationtype
Notes
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In this paper, SiGe/Si multilayer heterostructures prepared by molecular beam epitaxy (MBE) are described with the aim of manufacturing SiGe heterojunction bipolar transistors (HBTs). Based on the simulations made by Medici, device structures have been designed and grown. The quality of the MBE layered structures has been characterized by reflection high-energy electron diffraction, X-ray diffraction, secondary ion mass spectrometry and spreading resistance. Furthermore, SiGe-HBTs have been fabricated. Promising DC and RF results of processed HBT devices have been obtained. © 2001 Elsevier Science B.V.
Subject headings and genre
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A1. Doping
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A1. X-ray diffraction
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A2. Single crystal growth
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A3. Molecular beam epitaxy
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B1. Germanium silicon alloys
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B2. Semiconducting silicon
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B3. Bipolar transistors
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B3. Heterojunction semiconductor devices
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Zhang, J.National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China
(author)
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Liu, D.National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China
(author)
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Yi, Q.National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China
(author)
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Guo, L.National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China
(author)
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Xu, S.National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, China
(author)
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Ni, Wei-XinLinköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik(Swepub:liu)weini41
(author)
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National Key Lab of Analog IC, SISC, MII, 14 Huayuan Rd, Nanping, Chongqing 400060, ChinaTekniska högskolan
(creator_code:org_t)
Related titles
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In:Journal of Crystal Growth227-228, s. 744-7480022-02481873-5002
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