Sökning: (LAR1:liu) pers:(Syväjärvi Mikael)
> (2000-2004) >
Core level and vale...
Core level and valence band photoemission study of the (1 1 1) and (1¯ 1¯ 1¯) surfaces of 3C-SiC
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Glans, P.-A. (författare)
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- Balasubramanian, T. (författare)
- MAX-Lab, Lund University, S-221 00, Lund, Sweden
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Johansson, Leif (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 470:3, s. 284-292
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A core level and valence band photoemission study of thick 3C-SiC(1 1 1) and 3C-SiC(1¯ 1¯ 1¯) epilayers grown by sublimation epitaxy is reported. The as introduced samples show threefold 1×1 low-energy electron diffraction patterns. For the Si face v3 and 6v3 reconstructed surfaces develop after in situ heating to 1100 °C and 1300 °C, respectively. For the C face a 3×3 reconstruction form after heating to 980 °C. A semiconducting behavior is observed for the v3 and 3×3 reconstructed surfaces while the 6v3 reconstruction show a Fermi edge and thus a metallic-like behavior. The surface state on the v3 surface is investigated and found to have ?1 symmetry and a total band width of 0.10 eV within the first surface Brillouin zone. For the Si2p and C 1s core levels binding energies and surface shifted components are extracted and compared to earlier reported results for 6H- and 4H-SiC.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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