Electronic structure of Sn/Si(111) √3×√3 : Indications of a low-temperature phase

• The Sn/Si(111) √3×√3 surface has been studied by photoelectron spectroscopy, low-energy electron diffraction (LEED), and scanning tunneling microscopy. Unlike Sn/Ge(111), the Sn/Si(111) surface shows a √3×√3 LEED pattern at low temperature also (70 K). The electronic structure, however, is inconsistent with a pure √3×√3 phase. Sn 4d spectra exhibit two major components and the valence band shows two surface bands. These features have been associated with the low-temperature 3×3 phase in the case of Sn/Ge(111). The similarity in the electronic structure points to stabilization of a low-temperature phase for Sn/Si(111) also, but at a significantly lower temperature (<70 K).

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