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Low-power micromach...
Low-power micromachined MOSFET gas sensor
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- Briand, D. (författare)
- Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland, Actuators and Microsystems Lab., Institute of Microtechnology, Neuchâtel, Switzerland
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- Van, Der Schoot B. (författare)
- Van Der Schoot, B., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland
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- De, Rooij N.F. (författare)
- De Rooij, N.F., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland, Research and Development Department, Cordis Europa N.V., Roden, Netherlands, Institute of Microtechnology, University of Neuchâtel, Neuchâtel, Switzerland
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- Sundgren, Hans (författare)
- Linköpings universitet,Tekniska högskolan,Tillämpad Fysik
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- Lundström, Ingemar (författare)
- Linköpings universitet,Tekniska högskolan,Tillämpad Fysik
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Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland, Actuators and Microsystems Lab, Institute of Microtechnology, Neuchâtel, Switzerland Van Der Schoot, B., Institute of Microtechnology, University of Neuchâtel, CH-2007 Neuchâtel, Switzerland (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2000
- 2000
- Engelska.
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Ingår i: Journal of microelectromechanical systems. - : Institute of Electrical and Electronics Engineers (IEEE). - 1057-7157 .- 1941-0158. ; 9:3, s. 303-308
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- This paper reports on the design, fabrication, and characterization of the first low-power consumption MOSFET gas sensor. The novel MOSFET array gas sensor has been fabricated using anisotropic bulk silicon micromachining. A heating resistor, a diode used as temperature sensor, and four MOSFETs are located in a silicon island suspended by a dielectric membrane. The membrane has a low thermal conductivity coefficient and, therefore, thermally isolates the electronic components from the chip frame. This low thermal mass device allows the reduction of the power consumption to a value of 90 mW for an array of four MOSFETs at an operating temperature of 170 °C. Three of the MOSFETs have their gate covered with thin catalytic metals and are used as gas sensors. The fourth one has a standard gate covered with nitride and could act as a reference. The sensor was tested under different gaseous atmospheres and has shown good gas sensitivities to hydrogen and ammonia. The low-power MOSFET array gas sensor presented is suitable for applications in portable gas sensor instruments, electronic noses, and automobiles.
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
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