Observation of vacancy clusters in HTCVD grown SiC

• Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

Keyword

SiC

HTCVD

positron

vacancy cluster

atomic superposition

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

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