Correlation between electrical and optical mapping of boron related complexes in 4H-SiC

• Boron related photoluminescence (PL) and capacitance transient spectroscopy (DLTS and MCTS) peaks have been investigated around SIMS craters. Enhancement of boron and hydrogen related PL was observed in the vicinity of the crater, whereas the concentration of electrically active boron as measured by MCTS has decreased considerably. Comparison of the boron MCTS peak behavior after electron and proton irradiation is presented. Possible defect models based on the obtained results are discussed.

Nyckelord

boron

DLTS

hydrogen

MCTS

photoluminescence

SIMS

TECHNOLOGY

TEKNIKVETENSKAP

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