Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

• The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered root3 X roots R30degrees reconstructed SiC surfaces prepared by in situ heating at similar to950degreesC. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Au/SiC

photoemission

Schottky barriers

contacts

silicon carbide

surface treatment

capacitance-voltage

current-voltage

TECHNOLOGY

TEKNIKVETENSKAP

surface treatment

silicon carbide

contacts

Schottky barriers

Au/SiC

photoemission

capacitance-voltage

current-voltage

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)