Search: WFRF:(Amano H.)
> (2000-2004) >
Photoluminescence o...
Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells
-
- Monemar, Bo (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Paskov, Plamen (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Bergman, JP (author)
- Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
-
show more...
-
- Pozina, Galia (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Paskova, Tanja (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
-
- Kamiyama, S (author)
- Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
-
- Iwaya, M (author)
- Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
-
- Amano, H (author)
- Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
-
- Akasaki, I (author)
- Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Meijo Univ, Dept Elect Engn & Elect, Tempaku Ku, Nagoya, Aichi 468, Japan Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 468, Japan
-
show less...
-
(creator_code:org_t)
- 2002
- 2002
- English.
-
In: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 190:1, s. 161-166
- Related links:
-
https://urn.kb.se/re...
Abstract
Subject headings
Close
- We report on a detailed study of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells (MQWs) with an In composition x in the QWs of about 0.1, and a small In composition y in the barrier of 0.01-0.02. The MOVPE growth procedure was optimized to allow growth without In segregation. The InyGa1-yN barriers had a Si doping of about 5 x 10(18) cm(-3) . The low temperature photoluminescence spectra show two sets of exciton-like spectra with quite different properties. The lower energy emission has a small thermal activation energy (about 5 meV), and thus disappears at elevated temperatures, it is not observed at room temperature. The higher energy exciton state has a decay time of about 5 ns, while the lower energy process is much slower. We have also done preliminary studies on samples where the MQW region is situated in a p-n junction field, with semi-transparent contacts, to study the effects of varying the bias across the MQW structure. The combination of optical data can e interpreted in terms of a substantial potential gradient across the MQW region for both samples. The conclusion is that probably only one QW is emitting at low T (and no bias), and the second lower energy PL peak originates from a shallow notch in the conduction band at the interface between the thick GaN buffer layer and the first Ga(In)N barrier.
Keyword
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database