Peculiarities of exciton-polaritons in GaN at different polarizations studied by mu-photoluminescence spectroscopy

• We report on polariton properties in high quality thick GaN grown by hydride vapor phase epitaxy on c-sapphire. A strong fine is observed in the vicinity of the A exciton in T-polarization (k perpendicular to c, E parallel to the c-axis) by micro-photoluminescence (mu-PL). Comparison of the mu-PL and mu-reflectance spectra confirms the internal origin of the polariton emission. In the samples with low density of residual donors the enhancement of the a-polarized component is induced mostly by interbranch scattering which occurs, possibly., due to the complex structure of the exciton-polariton branches at k perpendicular to c. The Gamma(1)-Gamma(5) exciton splitting in the C band is determined by the mu-reflectance as similar to1 meV.

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