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Electrical peculiar...
Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures
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- Horvath, ZJ (author)
- Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
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- Järrendahl, Kenneth (author)
- Linköpings universitet,Tekniska högskolan
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- Adam, M (author)
- Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
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- Szabo, I (author)
- Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
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- Van Tuyen, V (author)
- Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
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- Czigany, Z (author)
- Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 190:1-4, s. 403-407
- Related links:
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https://urn.kb.se/re...
Abstract
Subject headings
Close
- The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.
Keyword
- Si
- SiGe
- Schottky barrier
- superlattice
- amorphous
- electrical behaviour
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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