Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures

Horvath, ZJHungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden (författare)

The current-voltage (I-V) and capacitance-voltage (C-V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature rang, of 80-320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. (C) 2002 Elsevier Science B.V. All rights reserved.

Järrendahl, KennethLinköpings universitet,Tekniska högskolan(Swepub:liu)kenja53 (författare)
Adam, MHungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden (författare)
Szabo, IHungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden (författare)
Van Tuyen, VHungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden (författare)
Czigany, ZHungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden (författare)
Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary Linkoping Univ, Dept Phys, S-58183 Linkoping, SwedenTekniska högskolan (creator_code:org_t)

Av författaren/redakt...: Horvath, ZJ; Järrendahl, Kenn ...; Adam, M; Szabo, I; Van Tuyen, V; Czigany, Z

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