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Mass transport growth and properties of hydride vapour phase epitaxy GaN

Paskova, Tanja (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Paskov, Plamen (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Goldys, EM (author)
Linkoping Univ, S-58183 Linkoping, Sweden Macquarie Univ, Sydney, NSW 2109, Australia Chalmers Univ Technol, S-41296 Gothenburg, Sweden Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria HMA, Dept Elect, S-16440 Kista, Sweden
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Darakchieva, Vanya (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Sodervall, U (author)
Linkoping Univ, S-58183 Linkoping, Sweden Macquarie Univ, Sydney, NSW 2109, Australia Chalmers Univ Technol, S-41296 Gothenburg, Sweden Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria HMA, Dept Elect, S-16440 Kista, Sweden
Godlewski, M (author)
Linkoping Univ, S-58183 Linkoping, Sweden Macquarie Univ, Sydney, NSW 2109, Australia Chalmers Univ Technol, S-41296 Gothenburg, Sweden Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria HMA, Dept Elect, S-16440 Kista, Sweden
Zielinski, M (author)
Linkoping Univ, S-58183 Linkoping, Sweden Macquarie Univ, Sydney, NSW 2109, Australia Chalmers Univ Technol, S-41296 Gothenburg, Sweden Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria HMA, Dept Elect, S-16440 Kista, Sweden
Valcheva, E (author)
Linkoping Univ, S-58183 Linkoping, Sweden Macquarie Univ, Sydney, NSW 2109, Australia Chalmers Univ Technol, S-41296 Gothenburg, Sweden Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria HMA, Dept Elect, S-16440 Kista, Sweden
Carlstrom, CF (author)
Wahab, Qamar Ul (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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 (creator_code:org_t)
2001
2001
English.
In: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 188:1, s. 447-451
Related links:
https://urn.kb.se/re...
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We report a comparative study of the optical and structural properties of mass-transport and conventionally grown GaN by hydride vapor phase epitaxy. A strong donor-acceptor pair emission is observed from the mass-transport regions with a distinctive intensity contrast between the exciton and donor-acceptor bands from mass-transport and nontransport regions. Secondary ion mass spectroscopy was employed to investigate the impurity incorporation into different regions. A moderate increase of residual impurity incorporation or redistribution was found in mass-transport regions related to different growth modes.

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TECHNOLOGY
TEKNIKVETENSKAP

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