Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 x 10(17)-1 x 10(20) cm(-3). The influence of several factors, such as nonparabolicity, electron-electron interaction. and electron-impurity interaction on both the spectral and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.

Paskova, TanjaLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan(Swepub:liu)tanpa12 (author)
Goldys, EMSemiconductor Science and Technology Laboratories, Macquarie University, Sydney, Australia (author)
Evtimova, SFaculty of Physics, Sofia University, Sofia, Bulgaria (author)
Monemar, BoLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)bomo46 (author)
Faculty of Physics, Sofia University, Sofia, BulgariaInstitutionen för fysik, kemi och biologi (creator_code:org_t)

In:Physical Review B. Condensed Matter and Materials Physics64:41098-01211550-235X

By the author/editor: Arnaudov, B; Paskova, Tanja; Goldys, EM; Evtimova, S; Monemar, Bo

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