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Comparison of HF and ozone treated SiC surfaces
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- Mikalo, RP (author)
- BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden
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- Hoffmann, P (author)
- BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden
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- Batchelor, DR (author)
- BTU Cottbus, Angew Phys Sensor, DE-03046 Cottbus, Germany Linkoping Univ, Div Appl Phys, SE-58183 Linkoping, Sweden Linkoping Univ, S SENCE, SE-58183 Linkoping, Sweden
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- (creator_code:org_t)
- 2000
- 2000
- English.
- In: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 353-3, s. 219-222
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Single crystals of SiC were etched in hydrofluoric acid to remove the native oxide. Ozone exposure at room temperature is shown to give an oxide of about 0.7nm. The differences of interface and bulk oxides regarding their elemental composition and their oxidation states are reported as determined by photoelectron spectroscopy utilizing synchrotron radiation.
Keyword
- field-effect transistor (FET)
- gas sensors
- non-destructive depth profiling
- ozone
- schottky diodes
- thin oxide
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Mikalo, RP
- Hoffmann, P
- Batchelor, DR
- Lloyd-Spetz, A
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- Schmeisser, D
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- Linköping University
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