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Boron centers in 4H...
Boron centers in 4H-SiC
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- Aradi, B (författare)
- Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
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- Gali, Adam (författare)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
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- Deak, P (författare)
- Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
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- Rauls, E (författare)
- Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
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- Frauenheim, T (författare)
- Tech Univ Budapest, Dept Atom Phys, HU-1111 Budapest, Hungary Univ Gesamthsch Paderborn, Dept Phys, DE-33095 Paderborn, Germany Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
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- Nguyen, Tien Son (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Materials science Forum, Vols. 353-356. ; , s. 455-458
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- The origin of the "deep boron related acceptor level" in SIC is subject to a lot of controversy. Based on ENDOR investigations, a B-Si+V-C model was suggested, while PL studies indicated the acceptor on the carbon sublattice. Our former ab initio LDA molecular cluster calculation showed that in the B-Si+V-C complex the carbon vacancy acts as the acceptor. Now, ah initio LDA supercell calculations have been carried out for boron-related complexes to calculate the occupation levels in 4H-SiC. It has been found that the 0/- level for the B-Si+V-C complex lies in the upper half of the gap, therefore it can be disregarded as the origin of the "deep boron-related acceptor level". Investigating other feasible boron-related complexes, B-Si+Si-C appears to be the best candidate.
Nyckelord
- boron
- intrinsic defects
- occupancy level
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)