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  • Paskova, TanjaLinköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi (author)

Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'

  • Article/chapterEnglish2000

Publisher, publication year, extent ...

  • Warrendale :Materials Research Society,2000
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-49514
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-49514URI
  • https://doi.org/10.1557/PROC-595-F99W3.14DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:kon swepub-publicationtype

Series

  • Materials Research Society Symposium Procedings,0272-9172 ;595

Notes

  • We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN 'template' layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measurements shows an absence of highly doped columnar structures which are typically present in thick HVPE-GaN films grown directly on sapphire. This improved structure results in a reduction of two orders of magnitude of the free carrier concentration from Hall measurements. It was found that the structure, morphology, electrical and optical properties of homoepitaxial thick GaN layers grown by HVPE were strongly influenced by the properties of the MOCVD-GaN 'template'. Additionally the effect of Si doping of the GaN buffer layers on the HVPE-GaN properties was analysed.

Subject headings and genre

  • TECHNOLOGY
  • TEKNIKVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Tungasmita, SukkanesteLinköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)suktu97 (author)
  • Valcheva, ELinkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany (author)
  • Svedberg, EB (author)
  • Arnaudov, BLinkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany (author)
  • Evtimova, SLinkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany (author)
  • Persson, PerLinköpings universitet,Tekniska högskolan,Tunnfilmsfysik(Swepub:liu)perpe25 (author)
  • Henry, AnneLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)annhe32 (author)
  • Beccard, RLinkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany (author)
  • Heuken, MLinkoping Univ, IFM, S-58183 Linkoping, Sweden Univ Sofia, Fac Phys, Sofia 1164, Bulgaria Aixtron AG, D-52072 Aachen, Germany (author)
  • Monemar, BoLinköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)bomo46 (author)
  • Linköpings universitetTekniska högskolan (creator_code:org_t)

Internet link

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