Impurity resistivity of the double-donor system Si: P,Bi

da Silva, AFInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (author)

Impurity resistivity of the double-donor system Si : P,Bi

The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].

Sernelius, BoLinköpings universitet,Tekniska högskolan,Teoretisk Fysik(Swepub:liu)bose02 (author)
de Souza, JPInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (author)
Boudinov, HInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (author)
Zheng, HR (author)
Sarachik, MPInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (author)
Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USATekniska högskolan (creator_code:org_t)

By the author/editor: da Silva, AF; Sernelius, Bo; de Souza, JP; Boudinov, H; Zheng, HR; Sarachik, MP

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.