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Impurity resistivit...
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da Silva, AFInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
(author)
Impurity resistivity of the double-donor system Si : P,Bi
- Article/chapterEnglish1999
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LIBRIS-ID:oai:DiVA.org:liu-49893
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-49893URI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].
Subject headings and genre
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TECHNOLOGY
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TEKNIKVETENSKAP
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Sernelius, BoLinköpings universitet,Tekniska högskolan,Teoretisk Fysik(Swepub:liu)bose02
(author)
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de Souza, JPInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
(author)
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Boudinov, HInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
(author)
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Zheng, HR
(author)
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Sarachik, MPInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA
(author)
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Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USATekniska högskolan
(creator_code:org_t)
Related titles
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In:Physical Review B Condensed Matter60:23, s. 15824-158280163-18291095-3795
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