WFRF:(Zhao Wei)
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- Lynch, S.A.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom (author)
Toward silicon-based lasers for terahertz sources
- Article/chapterEnglish2006
Publisher, publication year, extent ...
- 2006
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:liu-50083
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50083URI
- https://doi.org/10.1109/JSTQE.2006.884069DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
Classification
Notes
- Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
Subject headings and genre
- Boron
- Far infrared
- Germanium
- Impurity
- Lifetime
- Phosphorus
- Pump-probe
- Quantum cascade laser
- Resonant tunneling diode (RTD)
- Silicon
- Suicide
- Terahertz
- Waveguide
- TECHNOLOGY
- TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
- Paul, D.J.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom (author)
- Townsend, P.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom (author)
- Matmon, G.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom (author)
- Suet, Z.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom (author)
- Kelsall, R.W.School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom (author)
- Ikonic, Z.School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom (author)
- Harrison, P.School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom (author)
- Zhang, J.Blackett Laboratory, Imperial College, London SW7 2AZ, United Kingdom (author)
- Norris, D.J.School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom (author)
- Cullis, A.G.School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom (author)
- Pidgeon, C.R.Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom (author)
- Murzyn, P.Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom (author)
- Murdin, B.School of Electronics and Physical Sciences, University of Surrey, Surrey GU2 7XH, United Kingdom (author)
- Bain, M.School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom (author)
- Gamble, H.S.School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom (author)
- Zhao, MingLinköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik(Swepub:liu)minzh44 (author)
- Ni, Wei-XinLinköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik(Swepub:liu)weini41 (author)
- IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United KingdomSchool of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom (creator_code:org_t)
Related titles
- In:IEEE Journal of Selected Topics in Quantum Electronics12:6, s. 1570-15771077-260X1558-4542
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- Ikonic, Z.
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- Norris, D.J.
- Cullis, A.G.
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