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Toward silicon-base...
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Lynch, S.A.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
(author)
Toward silicon-based lasers for terahertz sources
- Article/chapterEnglish2006
Publisher, publication year, extent ...
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-50083
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50083URI
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https://doi.org/10.1109/JSTQE.2006.884069DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried suicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser. © 2006 IEEE.
Subject headings and genre
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Boron
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Far infrared
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Germanium
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Impurity
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Lifetime
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Phosphorus
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Pump-probe
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Quantum cascade laser
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Resonant tunneling diode (RTD)
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Silicon
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Suicide
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Terahertz
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Waveguide
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TECHNOLOGY
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TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Paul, D.J.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
(author)
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Townsend, P.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
(author)
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Matmon, G.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
(author)
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Suet, Z.IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
(author)
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Kelsall, R.W.School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
(author)
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Ikonic, Z.School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
(author)
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Harrison, P.School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
(author)
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Zhang, J.Blackett Laboratory, Imperial College, London SW7 2AZ, United Kingdom
(author)
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Norris, D.J.School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom
(author)
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Cullis, A.G.School of Electronics and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom
(author)
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Pidgeon, C.R.Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
(author)
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Murzyn, P.Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
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Murdin, B.School of Electronics and Physical Sciences, University of Surrey, Surrey GU2 7XH, United Kingdom
(author)
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Bain, M.School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom
(author)
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Gamble, H.S.School of Electrical and Electronic Engineering, Queens University, Belfast BT9 5AH, United Kingdom
(author)
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Zhao, MingLinköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik(Swepub:liu)minzh44
(author)
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Ni, Wei-XinLinköpings universitet,Tekniska högskolan,Yt- och Halvledarfysik(Swepub:liu)weini41
(author)
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IEEE, Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United KingdomSchool of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
(creator_code:org_t)
Related titles
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In:IEEE Journal of Selected Topics in Quantum Electronics12:6, s. 1570-15771077-260X1558-4542
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Lynch, S.A.
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Paul, D.J.
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Townsend, P.
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Matmon, G.
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Suet, Z.
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Kelsall, R.W.
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show more...
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Ikonic, Z.
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Harrison, P.
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Zhang, J.
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Norris, D.J.
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Cullis, A.G.
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Pidgeon, C.R.
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Murzyn, P.
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Murdin, B.
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Bain, M.
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Gamble, H.S.
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Zhao, Ming
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Ni, Wei-Xin
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Linköping University