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Deposition and characterization of ternary thin films within the Ti-Al-C system by DC magnetron sputtering

Wilhelmsson, O. (author)
Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden
Persson, Per (author)
Linköpings universitet,Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden,Tekniska högskolan,Tunnfilmsfysik
Lewin, Erik (author)
Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden
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Emmerlich, Jens (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
Eklund, Per (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
Persson, Per (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
Högberg, Hans (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
Li, S. (author)
Ahuja, Rajeev (author)
Uppsala universitet,Fysiska institutionen,Uppsala University, Dept. of Physics, The Ångström Laboratory, P.O. Box 530, SE-751 21 Uppsala, Sweden
Eriksson, O. (author)
Uppsala universitet,Fysiska institutionen,Uppsala University, Dept. of Physics, The Ångström Laboratory, P.O. Box 530, SE-751 21 Uppsala, Sweden
Hultman, Lars (author)
Linköpings universitet,Tekniska högskolan,Tunnfilmsfysik
Jansson, U. (author)
Uppsala universitet,Institutionen för materialkemi,Department of Materials Chemistry, The Ångström Laboratory, Uppsala University, P.O. Box 538, SE-751 21 Uppsala, Sweden
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 (creator_code:org_t)
Elsevier BV, 2006
2006
English.
In: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 291:1, s. 290-300
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The formation of ternary compounds within the Ti-Al-C system was studied by magnetron sputtering for thin-film deposition and first-principles calculations for phase stability. As-deposited films were characterized with X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM). The hardness and Young's moduli of the material were studied by nanoindentation. Epitaxial and phase-pure films of Mn+1AXn phases Ti3AlC2 and Ti2AlC as well as the perovskite phase Ti3AlC were deposited on Al2O3(00l) wafers kept at temperatures between 800 and 900 °C. The only ternary phases observed at low temperatures (300 °C) were Ti3AlC and cubic (Ti,Al)C, the latter can be described as a metastable solid solution of Al in TiC similar to the more studied (Ti,Al)N system. The difficulties to form MAX phases at low substrate temperatures were attributed of requirement for a sufficient diffusivity to partition the elements corresponding to the relatively complex crystal structures with long c-axes. While MAX-phase synthesis at 800 °C is significantly lower than contemporary bulk sintering processes, a reduction of the substrate temperature towards 300 °C in the present thin-film deposition experiments resulted in stacking sequence variations and the intergrowth of (Ti,Al)C. © 2006 Elsevier B.V. All rights reserved.

Subject headings

NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)

Keyword

A1. Solid solutions
A3. PVD
B1. Carbides
B1. MAX-phase
B1. Perovksite
TECHNOLOGY
TEKNIKVETENSKAP

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