Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

• The free electron properties of nonpolar (1120)-oriented and semipolar (1011)-oriented wurtzite InN films are studied by generalized infrared ellipsometry (GIRSE). We demonstrate the sensitivity of GIRSE to the surface charge accumulation layer and find a distinct surface electron accumulation to occur at all surfaces. The obtained surface electron sheet densities are found to vary from 0.9x10(13) to 2.3x10(14) cm(-2) depending on the surface orientation and bulk electron concentration. The upper limits of the surface electron mobility parameters of 417-644 cm(2)/V s are determined and discussed in the light of electron confinement at the surface.

Nyckelord

accumulation layers

electron density

electron mobility

III-V semiconductors

indium compounds

semiconductor thin films

surface charging

wide band gap semiconductors

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