Thermal Stability and Phase Transformations of γ-/Amorphous-Al2O3 Thin Films

Eklund, Per,1977-Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan (author)

Magnetron-sputtered Al2O3 thin films were annealed in ambient air. The phase compositions of the as-deposited Al2O3 films were (i) fully amorphous, (ii) nanocrystalline γ-Al2O3 in an amorphous Al2O3 matrix, and (iii) fully crystalline γ. For all samples, annealing to 1 100-1 150 °C resulted in a transformation to α-alumina. The transformation paths depend on the phase fraction of γ in the as-deposited films. For amorphous films and films with low initial γ fraction, the intermediate phase θ-Al2O3 appeared in the range of 1 000-1 100 °C. For predominantly crystalline γ-Al2O3 as-deposited films no intermediate Al2O3 phases were observed, indicating a direct γ-to-α phase transformation at ≈1 100 °C.

Sridharan, M.Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark (author)
Singh, G.Interdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark (author)
Bottiger, JorgenInterdisciplinary Nanoscience Center (iNANO) and Department of Physics and Astronomy, University of Aarhus, DK-800 Aarhus C, Denmark (author)
Linköpings universitetTunnfilmsfysik (creator_code:org_t)

By the author/editor: Eklund, Per, 197 ...; Sridharan, M.; Singh, G.; Bottiger, Jorgen

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