Spatially direct and indirect transitions of self-assembled SiGe/Si quantum dots studied by photoluminescence excitation spectroscopy

• Well-resolved photoluminescence excitation (PLE) spectra are reported for selfassembled SiGe dots grown on Si(100) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.

Nyckelord

Ge-Si alloys

luminescence

molecular beam epitaxial growth

self-assembly

semiconductor quantum dots

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