Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

• High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V-TFL) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for; the NTs were obtained as similar to 0.27 eV and 2.1 x 10(16) cm(-3), respectively. The same parameters were also extracted for the ZnO NRs The deep-level states observed crossponds to zinc interstitials (Zn-i), which are responsible for the violet emission.

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