(LAR1:liu) pers:(Syväjärvi Mikael)
Search: (LAR1:liu) pers:(Syväjärvi Mikael) > (2010-2014) > Properties of 3C-Si...
- 5 of 77
- Previous record
- Next record
- To hitlist
Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
-
- Beshkova, Milena (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
- Lorenzzi, J. (author)
- UMR-CNRS
-
- Jegenyes, N. (author)
- UMR-CNRS
- show more...
- show less...
- (creator_code:org_t)
- Transtec Publications; 1999, 2010
- 2010
- English.
- In: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 183-186
- Conference paper (peer-reviewed)
Abstract
Subject headings
Close
- 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
Keyword
- 3C-SiC; Sublimation Epitaxy; morphology; AFM; HRXRD
- TECHNOLOGY
- TEKNIKVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
To the university's database
- 5 of 77
- Previous record
- Next record
- To hitlist
Find more in SwePub
- By the author/editor
- Beshkova, Milena
- Lorenzzi, J.
- Jegenyes, N.
- Birch, Jens
- Syväjärvi, Mikae ...
- Ferro, G.
- show more...
- Yakimova, Rosits ...
- show less...
- Articles in the publication
- Materials Scienc ...
- By the university
- Linköping University
Search outside SwePub
- Extend your search to:
- Google Book Search
- Google Scholar
Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.
- Copyright © LIBRIS - National Library Systems
- LIBRIS.kb.se
