Metastable defects in low-energy electron irradiated n-type 4H-SiC

• After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the defects Z(1/2) and EH6/7, which were already observed in as-grown layers, increased and the commonly found peaks EH1 and EH3 appeared. The bistable M-center, previously seen in high-energy proton implanted 4H-SiC, was detected. New bistable defects, the EB-centers, evolved after annealing out of the M-center, and EF3. The reconfiguration energies for one of the two EB-centers were determined to be about 0.96 eV for both transitions: from configuration I to II and from configuration II to I. Since low-energy electron irradiation (less than220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers are likely to be carbon related defects.

Nyckelord

metastable defects; bistability; electron irradiation; DLTS

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