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Analysis of the For...
Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Linkoping Univ, Linkoping, Sweden
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- Virojanadara, Chariya (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Linkoping Univ, Linkoping, Sweden
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- Gogova, Daniela (författare)
- Leibniz Institute for Crystal Growth, Berlin, Germany,Leibniz Inst Crystal Growth, Berlin, Germany
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- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Linkoping Univ, Linkoping, Sweden
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- Siche, D. (författare)
- Leibniz Institute for Crystal Growth, Berlin, Germany,Leibniz Inst Crystal Growth, Berlin, Germany
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- Larsson, Krister (författare)
- Department of Materials Chemistry, Uppsala University, Uppsala, Sweden
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- Johansson, Leif (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Linkoping Univ, Linkoping, Sweden
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- Larsson, Karin, 1955- (författare)
- Uppsala universitet,Oorganisk kemi
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(creator_code:org_t)
- Trans Tech Publications Inc. 2010
- 2010
- Engelska.
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2. - : Trans Tech Publications Inc.. ; 565, s. 645-648
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.4...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.
Ämnesord
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
Nyckelord
- sublimation; high temperature; Ar pressure; ARPES; LEEM; DFT
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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