A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier in German Microwave Conference Digest of Papers, GeMIC 2010, vol , issue , pp 276-279

Khan, H.R.Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan (författare)

A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.

Wahab, Q.Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan (författare)
Fritzin, JonasLinköpings universitet,Elektroniska komponenter,Tekniska högskolan(Swepub:liu)jonfr88 (författare)
Alvandpour, AtilaLinköpings universitet,Elektroniska komponenter,Tekniska högskolan(Swepub:liu)atial27 (författare)
Wahab, QamarLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)qamwa17 (författare)
Electronic Engineering Department, NED University of Engineering and Technology, Karachi, PakistanElektroniska komponenter (creator_code:org_t)

Av författaren/redakt...: Khan, H.R.; Wahab, Q.; Fritzin, Jonas; Alvandpour, Atil ...; Wahab, Qamar

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.