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Atomic force micros...
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Salem, MATokyo Institute of Technolog
(författare)
Atomic force microscope current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2
- Artikel/kapitelEngelska2005
Förlag, utgivningsår, omfång ...
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Japan Society of Applied Physics / Japanese Journal of Applied Physics; 1999,2005
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LIBRIS-ID:oai:DiVA.org:liu-59217
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-59217URI
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https://doi.org/10.1143/JJAP.44.L88DOI
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https://gup.ub.gu.se/publication/55398URI
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Språk:engelska
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Sammanfattning på:engelska
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Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Mizuta, HTokyo Institute of Technolog
(författare)
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Oda, STokyo Institute of Technolog
(författare)
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Fu, YGothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Goteborg and Chalmers University of Technology
(författare)
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Willander, MagnusGothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Goteborg and Chalmers University of Technology(Swepub:gu)xwilma
(författare)
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Tokyo Institute of TechnologInstitutionen för fysik (GU)
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Japanese Journal of Applied Physics: Japan Society of Applied Physics / Japanese Journal of Applied Physics; 199944:07-Jan, s. L88-L910021-49221347-4065
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