A TCAD Approach to Design a Broadband Power Amplifier

• Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication. It is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study broadband PA performance of RF-LDMOS using computational load-pull (CLP) analysis. To validate the TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB power amplifier. The concept is verified by designing an output broadband matching network at optimum impedance value (Zf) of RF-LDMOS using ADS software. The large signal results verify this concept and RF output power of 30.8 dBm is achieved with comparable gain and efficiency.

Nyckelord

Power amplifier

load-pull

time domain analysis

broadband

LC network

Si-LDMOS

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