FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy

• Thin films of iron silicide prepared by ion-beam and by electron-beam evaporation of iron on silicon substrates and following rapid thermal processing are investigated. Low-energy argon ion sputtering of surface layer is used for depth profile XPS analysis. The Si2p, Fe2p3/2, O1s and C1s electron spectra are recorded. On the basis of established binding energies and infrared transmission spectra (200–600 cm−1) conclusion are made about the effect of the annealing temperature and duration on the chemical bond type and phase composition of the iron silicide films.

Nyckelord

Thin films; Iron disilicide; XPS

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